 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Silicon Junction FETs (Small Signal) 2SK198 Silicon N-Channel Junction FET For low-frequency amplification 2.8 -0.3 +0.2 unit: mm 0.650.15 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.650.15 1.5 -0.05 +0.25 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 0.4 -0.05 +0.1 s Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDSX VGDO ID IG PD Tch Tstg Ratings 30 -30 20 10 150 150 -55 to +150 Unit 0.8 2 1.45 V V mA mA mW C C +0.2 1.1 -0.1 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): 1O s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Source cut-off voltage Mutual conductance Symbol IDSS IGSS VGSC gm * Conditions VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, ID = 0.5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 30V, ID = 1mA, GV = 80dB Rg = 100k, Function = FLAT min 0.5 - 0.1 4 typ 0 to 0.1 0.1 to 0.3 0.40.2 max 12 -100 -1.5 0.16 -0.06 +0.1 Unit mA nA V mS pF pF mV 13 14 3.5 60 Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NV * IDSS rank classification Runk IDSS (mA) P 0.5 to 3 1OP Q 2 to 6 1OQ R 4 to 12 1OR Marking Symbol 1 Silicon Junction FETs (Small Signal) PD Ta 240 8 Ta=25C 7 200 8.0 2SK198 ID VDS 9.6 VDS=10V ID VGS Allowable power dissipation PD (mW) Drain current ID (mA) 160 VGS=0V 5 4 - 0.1V 3 2 1 - 0.2V - 0.3V - 0.4V Drain current ID (mA) 6 6.4 120 4.8 80 3.2 Ta=75C 1.6 25C -25C 40 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 -1.0 - 0.8 - 0.6 - 0.4 - 0.2 0 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) gm VGS 20 VDS=10V Ta=25C 20 g m ID 10 Ciss, Coss VDS Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) VDS=10V Ta=25C f=1MHz VGS=-3V Ta=25C 8 Mutual conductance gm (mS) 16 Mutual conductance gm (mS) IDSS=5.0mA 16 12 12 2.0mA 8 6 Ciss 8 IDSS=5.0mA 4 4 2.0mA 0 - 0.8 4 2 Coss 0 - 0.6 - 0.4 - 0.2 0 0 1 2 3 4 5 6 7 8 0 1 3 10 30 100 Gate to source voltage VGS (V) Drain current ID (mA) Drain to source voltage VDS (V) Crss VDS Reverse transfer capacitance (Common source) Crss (pF) 5 VGS=-3V f=1MHz Ta=25C 4 12 NF f VDS=10V ID=5.2mA Ta=25C 10 Noise figure NF (dB) 8 3 6 Rg=500 2 4 1 2 1k 0 1 3 10 30 100 0 1 10 102 103 105 Drain to source voltage VDS (V) Frequency f (Hz) 2 |
Price & Availability of 2SK198
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |